Abstract: Ruthenium is viewed as a promising alternative to Cu and Co interconnect metals at M0/M1 interconnect layers due to its lower effective resistivity in highly-confined layers and vias, as ...
Abstract: Ruthenium (Ru) and Copper (Cu) interface promotes void-free Cu gap-fill through a Cu reflow approach. However, reliability issues such as Electromigration (EM) and time-dependent dielectric ...
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