Abstract: This work presents a simulation-based analysis of GaN HEMTs switching performance using the Double Pulse Test (DPT) in a Fly-Buck DC-DC converter topology. Two gate return configurations ...
The deduced emitter periphery surface recombination current (K B,surf) of type-I InP/In 0.37 Ga 0.63 As 0.89 Sb 0.11 HBTs is 1.57×10 −5 µA/μm at J C = 0.1 A/cm 2, which is twenty times lower than that ...
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