Abstract: Nearly ideal AlN-based vertical p-n diodes are demonstrated on an AIN substrate utilizing dopant-free distributed-polarization doping (DPD). Capacitance-voltage measurements revealed that ...
Abstract: The hysteresis cycles observed in the reverse leakage current measured at low temperatures in GaN-on-sapphire Schottky barrier diodes (SBDs) have been deeply studied and interpreted in terms ...
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