A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...

A new technical titled “Impact of Random Phase Distribution on Ferroelectric Tunnel Field-Effect Transistors With Mitigation Strategies for Compute-in-Memory Applications” was published by researchers ...

A semiconductor amplifying device with up to 100-meg input impedance is now available from an American manufacturer. (Some French firms already have announced field-effect devices.) Crystalonics, ...

Field-effect transistors (FETs) are the cornerstone of modern electronic devices, providing the essential functionality for digital logic, analog processing and power management. The fundamental ...

A new publication from Opto-Electronic Science; DOI 10.29026/oes.2024.230046 discusses photo-driven Fin Field-Effect Transistors. Infrared detectors are the core components of infrared detection ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

With the right mix of materials, TFETs promise cooler, smaller, and more efficient circuits for everything from the Internet of Things to brain-inspired computers. But before they can leave the lab, ...

A new technical paper titled “A Cryogenic Ultra-Thin Body SiGeSn Transistor” was published by researchers at TU Wien, Johannes Kepler University, Universidad de Granada, and Max Planck Institute for ...

This research was published in Advanced Science ("High-temperature and high-electron mobility metal-oxide-semiconductor field-effect transistors based on n-type diamond"). World’s First N-Channel ...

(Left) Atomic force microscope image of diamond epilayer surface morphology. (Middle) Optical microscope image of the diamond MOSFET. (Right) Performance of the MOSFET measured at 300°C. The drain ...