EDN

Low On Resistance Power MOSFET

Vishay Intertechnology, Inc. today released two new 100 V n-channel TrenchFET® power MOSFETs with on-resistance ratings down to 4.5 V VGS in SO-8 and PowerPAK® SO-8 packages. Utilizing Vishay’s new ...
EDN

Low On-Resistance Power MOSFETs

Vishay Intertechnology, Inc. introduced new 8 V and 20 V n-channel and p-channel TrenchFET® power MOSFETs with the industry’s lowest on-resistance in 1 mm by 1 mm by 0.55 mm and 1.6 mm by 1.6 mm by ...
Electronic Design

Low-Power AFE Tackles Portable Electrochemical Measurements

When compared to “conventional” voltage, current, impedance, power, and spectrum tests spanning dc to RF, the world of wet-lab electrochemistry and its amperometric, voltammetric, and impedance ...
Business Wire

Ultra-Low On-Resistance 100 V and 200 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications

EPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) transistor family for critical spaceborne and other high reliability environments. ANDOVER, Mass.--(BUSINESS WIRE)--EPC Space ...
Electronic Design

The eGaN FET-Silicon Power Shoot-Out: 2: Drivers, Layout

Find a downloadable version of this story in pdf format at the end of the story. To determine the gate drive circuit requirements, and how they differ from traditional silicon MOSFET drivers, it is ...