Dynamic Random Access Memory (DRAM) serves as the backbone of modern computing, enabling devices ranging from smartphones to high-performance servers. As the demand accelerates for higher density and ...
Over the years, there have not been many drastic changes to the structure of DRAM devices. There have been a few tweaks here and there to account for smaller process geometries and to optimize design, ...
Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...
NEO Semiconductor has announced that it has developed the "world's first 3D NAND-like DRAM cell array," which aims to increase DRAM chip density using established 3D stacking technology. Designed to ...
VCT (vertical channel transistor) DRAM is one of the first achievements towards this goal, with Samsung expected to complete the initial development of VCT DRAM in 2025, with 3D DRAM hitting the ...
Neo Semiconductor has announced the world’s first 3D stackable DRAM technology, called 3D X-DRAM, that could revolutionize the memory industry as we know it today. Neo estimates that its 3D X-DRAM ...
This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...
Something to look forward to: The memory industry is known for its conservative approach, often favoring incremental improvements over revolutionary changes. But as we look toward the end of the ...
Kyoto, Japan — Sony Corp. and Toshiba Corp. have jointly developed an embedded-DRAM cell measuring 0.069 square micron in 45-nanometer CMOS technology. The companies presented their on-chip memory for ...
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