MALVERN, PA — Vishay Intertechnology (NYSE: VSH) recently introduced four new 100-volt Gen 2 Trench MOS Barrier Schottky ...

Vishay Intertechnology VSH recently launched Gen 3 1200 V silicon carbide (SiC) Schottky diodes. The diodes boast high surge current robustness, low forward voltage drop, capacitive charge, and ...

Vishay Intertechnology VSH recently launched its first two-in-one standard rectifier and transient voltage suppressor (TVS) device, R3T2FPHM3. The new device’s rectifier features a low forward voltage ...

Vishay Intertechnology, Inc. VSH is leaving no stone unturned to expand its discrete offerings to bolster its presence in the booming semiconductor industry. The unveiling of four FRED Pt Gen 5 600 V ...

Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new 1200 V MOSFET power modules designed to increase power ...

Vishay Intertechnology 100 V Gen 2 TMBS® Rectifier Modules Deliver Forward Voltage Drop Down to 0.83 V in SOT-227 Package ...

With low profiles of 0.6mm for the 1-A device and 0.5mm for the 0.5-A device, Vishay FlipKY chip scale Schottky diodes are designed to save space in cell phones, Bluetooth accessories, PDAs, MP3 ...

40 A to 240 A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nC MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc.

Vishay Intertechnology, Inc. has introduced 16 new 650-V and 1,200-V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. These new devices consist of 40-A to 240-A dual ...

MALVERN, Pa., July 09, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (VSH) today introduced three new Gen 3 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the compact, low profile ...

Vishay Intertechnology Inc. is offering more than 120 diode devices in the SMF (DO219-AB) package, which combines high power capability and miniaturized dimensions of 3.7 mm × 1.8 mm × 0.98 mm to ...